IXFA10N60P IXYS, IXFA10N60P Datasheet - Page 4

MOSFET N-CH 600V 10A D2-PAK

IXFA10N60P

Manufacturer Part Number
IXFA10N60P
Description
MOSFET N-CH 600V 10A D2-PAK
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFA10N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
740 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5.5V @ 1mA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1610pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.74 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
200000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
0.74
Ciss, Typ, (pf)
1720
Qg, Typ, (nc)
32
Trr, Typ, (ns)
120
Trr, Max, (ns)
200
Pd, (w)
200
Rthjc, Max, (ºc/w)
0.62
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFA10N60P
Manufacturer:
IXYS
Quantity:
18 000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
30
25
20
15
10
10
16
14
12
10
5
0
1
8
6
4
2
0
0.3
3.2
0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
3.6
5
f
= 1 MHz
0.5
4.0
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
4.4
15
T
V
J
V
V
GS
= 125ºC
DS
SD
0.7
4.8
- Volts
20
- Volts
- Volts
T
J
= 125ºC
- 40ºC
25ºC
0.8
5.2
25
T
J
0.9
5.6
30
= 25ºC
C oss
C iss
C rss
6.0
1.0
35
1.1
6.4
40
0.01
0.1
10
22
20
18
16
14
12
10
0.00001
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
1
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 5A
= 10mA
= 300V
2
0.0001
5
4
10
Fig. 8. Transconductance
0.001
Fig. 10. Gate Charge
Pulse Width - Seconds
6
Q
G
I
15
D
- NanoCoulombs
- Amperes
0.01
8
20
10
0.1
IXFA10N60P
IXFP10N60P
T
125ºC
J
= - 40ºC
25
25ºC
12
IXYS REF: IXF_10N60P (4J)4-18-10-D
1
30
14
10
35
16

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