IRL3705ZPBF International Rectifier, IRL3705ZPBF Datasheet - Page 5

MOSFET N-CH 55V 75A TO-220AB

IRL3705ZPBF

Manufacturer Part Number
IRL3705ZPBF
Description
MOSFET N-CH 55V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRL3705ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Continuous Drain Current
86A
Power Dissipation
130W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL3705ZPBF

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0.001
100
0.01
90
80
70
60
50
40
30
20
10
0.1
0
10
1
1E-006
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
Case Temperature
T C , Case Temperature (°C)
75
Limited By Package
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
J
1
Ci= i Ri
1
Ci
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
-60 -40 -20 0
R
0.001
1
R
I D = 43A
V GS = 5.0V
1
2
R
T J , Junction Temperature (°C)
2
2
R
vs. Temperature
2
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
20 40 60 80 100 120 140 160 180
Ri (°C/W)
0.5413
0.5985
0.01
0.000384
0.002778
i (sec)
5
0.1

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