IRL3705ZPBF International Rectifier, IRL3705ZPBF Datasheet - Page 3

MOSFET N-CH 55V 75A TO-220AB

IRL3705ZPBF

Manufacturer Part Number
IRL3705ZPBF
Description
MOSFET N-CH 55V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRL3705ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Continuous Drain Current
86A
Power Dissipation
130W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL3705ZPBF

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1000
1000
0.01
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
0
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
2.8V
1
4
6
Tj = 25°C
60µs PULSE WIDTH
10
V DS = 15V
8
60µs PULSE WIDTH
10
T J = 175°C
TOP
BOTTOM
100
12
14
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
16
1000
120
100
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
80
60
40
20
10
0
1
0.1
0
V DS , Drain-to-Source Voltage (V)
20
I D ,Drain-to-Source Current (A)
vs. Drain Current
1
40
2.8V
Tj = 175°C
60µs PULSE WIDTH
60
10
T J = 25°C
T J = 175°C
80
TOP
BOTTOM
V DS = 8.0V
100
100
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
3
120

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