STP40NF10L STMicroelectronics, STP40NF10L Datasheet - Page 5
![MOSFET N-CH 100V 40A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP40NF10L
Manufacturer Part Number
STP40NF10L
Description
MOSFET N-CH 100V 40A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP40NF10L.pdf
(12 pages)
Specifications of STP40NF10L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
33 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 5V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 17 V
Continuous Drain Current
40 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6741-5
STP40NF10L
STP40NF10L
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP40NF10L
Manufacturer:
ST
Quantity:
12 500
STP40NF10L
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
T
(see Figure 15)
SD
SD
j
= 150°C
Test conditions
= 40A, V
= 40A, V
GS
DD
= 0
= 30V
Electrical characteristics
Min.
Typ.
110
467
8
Max
160
1.3
40
Unit
nC
ns
A
A
V
A
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