STP40NF10L STMicroelectronics, STP40NF10L Datasheet - Page 5

• Manufacturer Part Number: STP40NF10L
• Description: MOSFET N-CH 100V 40A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP40NF10L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 5V
• Input Capacitance (ciss) @ Vds: 2300pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.033 Ohms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 17 V
• Continuous Drain Current: 40 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6741-5; STP40NF10L

STP40NF10L
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
T
(see Figure 15)
SD
SD
j
= 150°C
Test conditions
= 40A, V
= 40A, V
GS
DD
= 0
= 30V
Electrical characteristics
Min.
Typ.
110
467
8
Max
160
1.3
40
Unit
nC
ns
A
A
V
A
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