IRF3707PBF International Rectifier, IRF3707PBF Datasheet - Page 3

• Manufacturer Part Number: IRF3707PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3707PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1990pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3707PBF

www.irf.com
Fig 1. Typical Output Characteristics
1000
1000
100
100
10
10
1
3.0
Fig 3. Typical Transfer Characteristics
0.1
V
V DS , Drain-to-Source Voltage (V)
4.0
GS
, Gate-to-Source Voltage (V)
1
5.0
20µs PULSE WIDTH
Tj = 25°C
3.5V
T = 25 C
V
20µs PULSE WIDTH
6.0
J
DS
= 15V
10
T = 175 C
°
J
TOP
BOTTOM 3.5V
7.0
°
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
8.0
100
1000
100
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
I =
D
62A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
IRF3707S/LPbF
J
Vs. Temperature
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
Tj = 175°C
3.5V
10
TOP
BOTTOM 3.5V
V
°
GS
=
VGS
10V
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
3
100