IRF3707PBF International Rectifier, IRF3707PBF Datasheet - Page 2

• Manufacturer Part Number: IRF3707PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3707PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1990pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3707PBF

Diode Characteristics
IRF3707S/LPbF
Dynamic @ T
Avalanche Characteristics
t
Static @ T
d(off)
Symbol
E
I
Symbol
I
I
V
t
Q
t
Q
Symbol
g
Q
Q
Q
Q
t
t
t
C
C
C
V
∆V
R
V
I
AR
S
SM
I
d(on)
r
f
rr
rr
DSS
GSS
fs
SD
AS
(BR)DSS
GS(th)
iss
oss
rss
rr
rr
DS(on)
g
gs
gd
oss
2
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
Static Drain-to-Source On-Resistance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
1.0
–––
–––
––– 0.88
–––
–––
–––
37
30
0.027
1990 –––
11.8
12.6
–––
–––
–––
707
–––
–––
–––
–––
–––
––– -200
0.8
8.2
6.3
8.5
3.3
9.0
39
49
42
62
19
18
78
50
–––
248
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12.5
100
200
1.3
3.0
59
74
63
93
27
–––
17
20
62
mΩ
nC
nC
nC
ns
pF
ns
ns
V/°C Reference to 25°C, I
µA
nA
V
S
V
V
Typ.
–––
–––
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
I
D
D
J
J
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
G
GS
GS
DS
= 24.8A
= 25°C, I
= 125°C, I
= 24.8A
= 25°C, I
= 125°C, I
= 1.8Ω
= 15V, I
= 15V
= 15V
= V
= 24V, V
= 24V, V
= 4.5V
= 0V, V
= 15V
= 4.5V
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
GS
, I
D
S
F
DS
D
D
D
ƒ
Conditions
S
F
D
= 250µA
= 31A, V
GS
GS
Conditions
ƒ
= 31A, V
Conditions
= 250µA
= 49.6A
= 15A
= 31A, V
= 31A, V
= 12A
= 15V
Max.
213
= 0V
= 0V, T
ƒ
ƒ
62
D
www.irf.com
GS
R
ƒ
= 1mA
=20V
ƒ
GS
R
J
=20V
= 0V
= 125°C
G
= 0V
Units
mJ
ƒ
ƒ
A
S
D