STP60NF06L STMicroelectronics, STP60NF06L Datasheet - Page 4

MOSFET N-CH 60V 60A TO-220

STP60NF06L

Manufacturer Part Number
STP60NF06L
Description
MOSFET N-CH 60V 60A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP60NF06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 4.5V
Input Capacitance (ciss) @ Vds
2000pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
60 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5895-5
STP60NF06L

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Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= 15V
= Max rating
= Max rating,
= ± 15V
= V
= 5V, I
= 10V, I
= 25V, f = 1MHz,
= 0
= 30V, I
= 48V, I
= 4.5V, R
Figure
Figure
STB60NF06L - STP60NF06L - STP60NF06LFP
GS
,
, I
D
I
D
15)
16)
D
GS
D
D
D
= 30A
= 30A
GS
G
= 30A
= 30A
= 60A,
= 250µA
= 4.5V
= 4.7Ω
=0
Min.
Min.
60
1
0.014
0.012
2000
Typ.
Typ.
360
125
220
20
35
55
30
35
10
20
0.016
0.014
Max.
Max.
±100
66
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V

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