IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 7
![MOSFET P-CH 55V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF5305PBF
Manufacturer Part Number
IRF5305PBF
Description
MOSFET P-CH 55V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF5305PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
-31 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 31 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF5305PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF5305PBF
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
IRF5305PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
V
GS
Re-Applied
Voltage
*
Reverse
Recovery
Current
*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Fig 14. For P-Channel HEXFETS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
**
Body Diode Forward
+
-
• dv/dt controlled by R
• I
• D.U.T. - Device Under Test
Diode Recovery
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
P.W.
+
IRF5305PbF
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
*
7