IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 2
![MOSFET P-CH 55V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF5305PBF
Manufacturer Part Number
IRF5305PBF
Description
MOSFET P-CH 55V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF5305PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
-31 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 31 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF5305PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF5305PBF
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
IRF5305PBF
Manufacturer:
IR
Quantity:
20 000
IRF5305PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
fs
D
S
(BR)DSS
GS(th)
SD
2
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25Ω, I
= -25V, starting T
/∆T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= -16A. (See Figure 12)
J
= 25°C, L = 2.1mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
––– -0.034 –––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
Min. Typ. Max. Units
-55
Min. Typ. Max. Units
8.0
–––
–––
–––
–––
–––
–––
J
≤ 175°C
≤ -16A, di/dt ≤ -280A/µs, V
1200 –––
250
–––
––– 0.06
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
520
–––
–––
–––
170
4.5
14
66
39
63
7.5
71
–––
-110
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.3
110
250
-25
63
13
29
-31
V/°C
µA
nC
nH
nA
ns
pF
nC
ns
Ω
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= -16A
= -16A
= 25°C, I
= 25°C, I
= 1.6Ω, See Fig. 10
= 6.8Ω
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -28V
≤ V
GS
(BR)DSS
, I
D
S
F
D
Conditions
= -250µA
D
D
Conditions
= -16A, V
= -16A
GS
GS
= -250µA
= -16A
= -16A
,
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
G
J
= 150°C
= 0V
G
D
S
S
D