STP4NK60ZFP STMicroelectronics, STP4NK60ZFP Datasheet - Page 3

• Manufacturer Part Number: STP4NK60ZFP
• Description: MOSFET N-CH 600V 4A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK60ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5980-5

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
d(off)
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
SD
t
oss
t
t
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
f
g
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
DD
G
G
G
DS
= 1 mA, V
= 4.7
= 4.7
= 4.7
= 4 A, V
= 4 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 15 V
= ± 20V
= 10V, I
= 0V, V
= 300 V, I
= 480V, I
= 10V
= 300 V, I
= 480V, I
= 24V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
V
V
GS
DS
I
D
GS
D
GS
D
GS
j
GS
D
D
D
= 150°C
= 2 A
D
= 50µA
= 2 A
= 0V to 480V
= 0
= 4 A,
= 4A,
= 0
= 10 V
= 10 V
= 2 A
= 2 A
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
3
oss
when V
1700
Typ.
3.75
1.76
Typ.
38.5
Typ.
18.8
Typ.
16.5
19.5
Typ.
510
400
9.5
3.8
9.8
8.5
67
13
12
29
12
12
3
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
±10
1.6
4.5
50
26
16
1
2
4
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
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