IRF6637TR1PBF International Rectifier, IRF6637TR1PBF Datasheet

IRF6637TR1PBF

Manufacturer Part Number

IRF6637TR1PBF

Description

MOSFET N-CH 30V 14A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6637TR1PBF.pdf (10 pages)

Specifications of IRF6637TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7.7 mOhm @ 14A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

14A

Vgs(th) (max) @ Id

2.35V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1330pF @ 15V

Power - Max

2.3W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MP

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

10.8 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

14 A

Power Dissipation

89 W

Gate Charge Qg

11 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6637TR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6637TR1PBF

Manufacturer:

SHARP

Quantity:

3 000

Current page: 1 of 10
Download datasheet (264Kb)

Description

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET

lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-

niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including R

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

RoHS Compliant

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses and Switching Losses

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

2.0

Fig 1. Typical On-Resistance Vs. Gate Voltage

V GS , Gate-to-Source Voltage (V)

T J = 25°C

4.0

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

T J = 125°C

Ãg

8.0

I D = 14A

DS(on)

Parameter

and gate charge to minimize losses in the control FET socket.

10.0

@ 10V

„

…

†

30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V

11nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

4.0nC

= 25°C, L = 0.52mH, R

I D = 11A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.0nC

gs2

Max.

V DS = 24V

VDS= 15V

110

±20

IRF6637TRPbF

DS(on)

20nC

= 25Ω, I

IRF6637PbF

packaging to achieve the

DirectFET™ ISOMETRIC

9.9nC

= 11A.

oss

DS(on)

Units

1.8V

gs(th)

5/5/06

Related parts for IRF6637TR1PBF

IRF6637TR1PBF Summary of contents

Page 1

RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible ...

Page 2

IRF6637PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings Power Dissipation 25° 70°C Power Dissipation 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

IRF6637PbF 1000 100 10 1 ≤60µs PULSE WIDTH 2. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150°C T ...

Page 5

150°C 100 25° -40°C 10.0 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6637PbF 0 1K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < 0.1% ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • • Fig 18. DirectFET™ Substrate and PCB Layout, MP Outline (Medium Size Can, P-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

IRF6637PbF DirectFET™ Outline Dimension, MP Outline (Medium Size Can, P-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6637TRPBF). For 1000 parts on 7" reel, order IRF6637TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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