IRFZ34NPBF International Rectifier, IRFZ34NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFZ34NPBF
• Description: MOSFET N-CH 55V 29A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 29A
• Power Dissipation: 68W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Current, Drain: 29 A
• Gate Charge, Total: 34 nC
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 7 ns
• Transconductance, Forward: 6.5 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Mounting Style: Through Hole
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34NPBF

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0.01
0.1
10
0.00001
1
30
25
20
15
10
5
0
Fig 9. Maximum Drain Current Vs.
D = 0.50
25
0.20
0.10
0.05
0.02
0.01
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Case Temperature
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
125
t , Rectangular Pulse Duration (sec)
1
°
150
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
t
10 V
d(on)
V
GS
V
J
t
r
DS
0.01
IRFZ34NPbF
DM
x Z
1
thJC
P
2
D.U.T.
DM
+ T
R
t
C
t
d(off)
1
D
t
2
t
f
+
-
V
0.1
DD
5