IRFZ34NPBF International Rectifier, IRFZ34NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ34NPBF
• Description: MOSFET N-CH 55V 29A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 29A
• Power Dissipation: 68W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Current, Drain: 29 A
• Gate Charge, Total: 34 nC
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 7 ns
• Transconductance, Forward: 6.5 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Mounting Style: Through Hole
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34NPBF

IRFZ34NPbF
4
1000
1200
1000
100
800
600
400
200
10
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
C
T = 175°C
V
Drain-to-Source Voltage
V
J
oss
iss
rss
SD
DS
Forward Voltage
0.8
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
T = 25°C
J
gs
ds
gd
1.2
+ C
+ C
10
gd
gd
f = 1MHz
, C
ds
1.6
SHORTED
V
GS
= 0V
2.0
100
A
A
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
I
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
D
C
J
= 16A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
G
10
, Drain-to-Source Voltage (V)
BY R
V
V
20
10
DS
DS
DS(on)
= 44V
= 28V
FOR TEST CIRCUIT
SEE FIGURE 13
www.irf.com
30
100µs
10µs
1ms
100
40
A
A