STL80N4LLF3 STMicroelectronics, STL80N4LLF3 Datasheet

MOSFET N-CH 40V 80A POWERFLAT6X5

STL80N4LLF3

Manufacturer Part Number
STL80N4LLF3
Description
MOSFET N-CH 40V 80A POWERFLAT6X5
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL80N4LLF3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
2530pF @ 25V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (6 x 5)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
4.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
80 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8486-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL80N4LLF3
Manufacturer:
ST
Quantity:
20 000
Part Number:
STL80N4LLF3
Quantity:
2 701
General features
1. When mounted on FR-4 board of 1 inch² , 2oz Cu,
Description
This series of product utilizes the latest advanced
design rules of ST’s proprietary STripFET™
Technology. The resulting Transistor is optimized
for low on-Resistance and minimal gate charge.
The chip-scaled PowerFLAT™ package allows a
significant board space saving, still boosting the
performance.
Applications
November 2006
Order codes
STL80N4LLF3
t<10 sec
Improved die-to-footprint ratio
Very low profile package (1mm Max)
Very low thermal resistance
Conduction losses reduced
Switching losses reduced
Switching application
Type
STL80N4LLF3
Part number
V
40V
N-channel 40V - 0.0042Ω - 80A - PowerFLAT™ (6x5)
DSS
STripFET™ Power MOSFET for DC-DC conversion
<0.005Ω
R
DS(on)
L80N4LLF3
Marking
20A
I
D
(1)
Rev 7
Internal schematic diagram
PowerFLAT™ (6x5)
Package
PowerFLAT™( 6x5 )
STL80N4LLF3
Tape & reel
Packaging
www.st.com
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STL80N4LLF3 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STL80N4LLF3 November 2006 R I DS(on) D (1) <0.005Ω 20A Internal schematic diagram Marking L80N4LLF3 PowerFLAT™ (6x5) Rev 7 STL80N4LLF3 PowerFLAT™( 6x5 ) Package Packaging Tape & reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STL80N4LLF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL80N4LLF3 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS (1) V Gate- source voltage GS (2) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (continuous (4) I Drain current (pulsed) DM (2) P Total dissipation at T TOT (3) P Total dissipation at T ...

Page 4

... 10V 4.5V Parameter Test conditions V = 25V MHz f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain V = 32V 4.5V GS (see Figure 13) STL80N4LLF3 Min. Typ 250 µ 0.0042 D =10 A 0.005 D Min. Typ. Max. 2530 574 21.5 D 6.9 8.2 Max. Unit V 10 µA 100 µ ...

Page 5

... STL80N4LLF3 Table 5. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time r Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/12 Figure 2. Figure 4. vs temperature Figure 6. STL80N4LLF3 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STL80N4LLF3 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped inductive load test circuit Figure 17. Switching time waveform STL80N4LLF3 ...

Page 9

... STL80N4LLF3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STL80N4LLF3 inch MIN. TYP. MAX. 0.031 0.032 0.036 0.0007 0.0019 0.007 0.013 0.015 0.018 0.196 0.187 0.163 0.165 0.167 0.236 0.226 ...

Page 11

... STL80N4LLF3 5 Revision history Table 7. Revision history Date 13-May-2005 20-Jun-2005 22-Jun-2005 04-Jan-2006 06-Jun-2006 04-Sep-2006 22-Nov-2006 Revision 1 First release. 2 Updated mechanical data 3 New R value on Table New footprint 5 Complete version 6 New template, no content change 7 Corrected part number Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STL80N4LLF3 ...

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