STD3NK100Z STMicroelectronics, STD3NK100Z Datasheet - Page 5

• Manufacturer Part Number: STD3NK100Z
• Description: MOSFET N-CH 1000V 2.5A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 601pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7967-2; STD3NK100Z

STF3NK100Z - STP3NK100Z - STD3NK100Z
Table 7.
Table 8.
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9.
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
Symbol
Symbol
Symbol
I
BV
V
SDM
I
I
t
t
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
(1)
SD
t
t
t
t
GSO
rr
rr
r
r
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 21)
I
V
(see Figure 21)
I
V
R
(see Figure 16)
V
R
(see Figure 16)
SD
SD
SD
GS
DD
DD
DD
DD
G
G
= 2.5A, V
= 2.5A, di/dt = 100A/µs,
= 2.5A, di/dt = 100A/µs,
=4.7Ω, V
=4.7Ω, V
= ±1mA (open drain)
= 100V, Tj= 25°C
= 100V, Tj=150°C
= 500V, I
= 500V, I
Test conditions
Test conditions
Test conditions
GS
GS
GS
D
D
= 1.25A,
= 1.25A,
=0
=10V
=10V
Electrical characteristics
Min.
Min.
Min.
30
Typ.
Typ.
Typ.
584
628
2.3
2.5
8.1
7.5
15
39
32
8
Max.
Max.
Max.
2.5
1.6
10
Unit
Unit
Unit
ns
ns
ns
ns
µC
µC
ns
ns
A
A
V
A
A
V
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