IRF6620 International Rectifier, IRF6620 Datasheet - Page 5

• Manufacturer Part Number: IRF6620
• Description: MOSFET N-CH 20V 27A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4130pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6620TR

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Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance Vs. Gate Voltage
12
10
8
6
4
2
0
I
2.0
AS
Fig 15a. Gate Charge Test Circuit
R G
12V
20V
V
V DS
V
GS
V GS , Gate-to-Source Voltage (V)
GS
Same Type as D.U.T.
t p
4.0
Current Regulator
.2µF
I AS
D.U.T
50KΩ
3mA
t p
Current Sampling Resistors
0.01 Ω
L
.3µF
6.0
I
G
D.U.T.
T J = 125°C
I
D
15V
T J = 25°C
V
8.0
(BR)DSS
I D = 27A
DRIVER
+
-
V
DS
+
-
V DD
10.0
A
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
90%
V
10%
V
Fig 14a. Switching Time Test Circuit
DS
Fig 14b. Switching Time Waveforms
GS
Fig 15b. Gate Charge Waveform
Vgs(th)
Qgs1 Qgs2
160
120
Vds
80
40
0
t
25
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
Starting T J , Junction Temperature (°C)
V
GS
t
r
Qgd
50
V
DS
Qgodr
75
t
d(off)
D.U.T
L
100
D
t
f
V
DD
TOP
BOTTOM
Vgs
+
-
125
Id
8.4A
22A
7.2A
I D
5
150