IRF6620 International Rectifier, IRF6620 Datasheet - Page 4

• Manufacturer Part Number: IRF6620
• Description: MOSFET N-CH 20V 27A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4130pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6620TR

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1000.0
4
100.0
150
120
10.0
90
60
30
1.0
0.1
0
25
0.2
0.001
0.01
100
0.1
10
1
1E-006
T J = 150°C
V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
50
0.4
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
75
0.6
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
T J = 25°C
100
0.8
0.0001
V GS = 0V
125
1.0
1.2
150
t 1 , Rectangular Pulse Duration (sec)
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
i/Ri
R
1
R
1
τ
2
R
τ
2
2
1000
R
Fig 10. Threshold Voltage vs. Temperature
0.1
2
100
0.1
2.5
2.0
1.5
1.0
10
1
-75
R
τ
3
0
3
Fig 8. Maximum Safe Operating Area
R
τ
3
3
Tc = 25°C
Tj = 150°C
Single Pulse
-50
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
V DS , Drain-toSource Voltage (V)
τ
R
4
τ
4
R
4
1
-25
4
τ
τ
C
T J , Temperature ( °C )
τ
Ri (°C/W)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
1.28011
8.72556
21.75
13.251
0
25
10
69
50
0.000322
0.164798
2.2576
τi (sec)
10
75
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I D = 250µA
100
100
100µsec
10msec
1msec
125 150
100