STP55NF06 STMicroelectronics, STP55NF06 Datasheet - Page 5
STP55NF06
Manufacturer Part Number
STP55NF06
Description
MOSFET N-CH 60V 50A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP55NF06.pdf
(18 pages)
Specifications of STP55NF06
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Dc
1120
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2777-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
ST
Quantity:
4 250
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Manufacturer:
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STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 50A, V
= 50A,
= 30V, T
Figure
Test conditions
16)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
170
4.5
75
Max.
200
1.5
50
Unit
nC
ns
A
A
V
A
5/18