STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 3
![MOSFET N-CH 900V 2.1A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP2NK90Z
Manufacturer Part Number
STP2NK90Z
Description
MOSFET N-CH 900V 2.1A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STP2NK90Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.05A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.3 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.1 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.1A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4378-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP2NK90Z
Manufacturer:
ST
Quantity:
8 500
Company:
Part Number:
STP2NK90Z
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STP2NK90ZFP
Manufacturer:
ST
Quantity:
15 000
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2.
Table 2.
Table 3.
V
Rthj-case Thermal resistance junction-case max
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
ESD(G-S)
I
V
DM
P
V
V
I
E
T
I
SD
DGR
TOT
I
I
T
T
AR
GS
DS
stg
AS
D
D
j
l
(1)
≤ 2.1A, di/dt ≤ 200A/µs, V
(2)
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source Voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF,
R=1.5KΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25 °C, I
Parameter
DD
≤ V
C
D
(BR)DSS
GS
Parameter
= 25°C
= I
Parameter
GS
j
= 20 kΩ)
max)
AR
= 0)
, T
, V
j
DD
C
C
≤ T
= 25°C
= 100°C
JMAX.
= 50 V)
STP2NK90Z
-55 to 150
-55 to 150
Value
2000
± 30
0.56
900
900
2.1
1.3
8.4
4.5
70
STD2NK90Z-1
STD2NK90Z
Value
Value
150
2.1
1.78
62.5
300
Electrical ratings
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
V
A
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