STD90N4F3 STMicroelectronics, STD90N4F3 Datasheet - Page 6

• Manufacturer Part Number: STD90N4F3
• Description: MOSFET N-CH 40V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8481-2

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
R
DS(on)
(mΩ)
4.5
6.5
6.0
5.5
5.0
0
Electrical characteristics (curves)
TO-220
Safe operating area
Output characteristics
Static drain-source on resistance
20
40
V
I
GS
D
=40A
=10V
60
DPAK
80
HV29000
I
D
Doc ID 14212 Rev 3
(A)
STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Transfer characteristics
Normalized BVDSS vs temperature