STD95NH02LT4 STMicroelectronics, STD95NH02LT4 Datasheet

MOSFET N-CH 24V 80A DPAK

STD95NH02LT4

Manufacturer Part Number
STD95NH02LT4
Description
MOSFET N-CH 24V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD95NH02LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Input Capacitance (ciss) @ Vds
2070pF @ 15V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4105-2
Features
1. Value limited by wire bonding
Description
The device is based on the latest generation of
ST’s proprietary STripFET™ technology. An
innovative layout enables the device to also
exhibit extremely low gate charge for the most
demanding requirements in high-frequency DC-
DC converters. It’s therefore ideal for high-density
converters in Telecom and Computer
applications.
Application
Table 1.
August 2007
STD95NH02L-1
STD95NH02L
Conduction losses reduced
Switching losses reduced
Low threshold device
Switching applications
STD95NH02LT4
STD95NH02L-1
Type
Order code
Device summary
V
24V
24V
DSS
Ultra low gate charge STripFET™ Power MOSFET
< 0.005Ω
< 0.005Ω
R
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK
DS(on)
D95NH02L
D95NH02L
Marking
80A
80A
I
D
(1)
(1)
Rev 4
Figure 1.
Package
DPAK
IPAK
Internal schematic diagram
IPAK
STD95NH02L-1
1
2
STD95NH02L
3
Tape & reel
Packaging
DPAK
Tube
1
www.st.com
3
1/16
16

Related parts for STD95NH02LT4

STD95NH02LT4 Summary of contents

Page 1

... DC- DC converters. It’s therefore ideal for high-density converters in Telecom and Computer applications. Application ■ Switching applications Table 1. Device summary Order code STD95NH02LT4 STD95NH02L-1 August 2007 N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK R I DS(on) D (1) < 0.005Ω 80A (1) < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD95NH02L - STD95NH02L-1 1 Electrical ratings Table 2. Absolute maximum ratings Symbol (1) V Drain-source voltage rating spike V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS (2) I Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD95NH02L - STD95NH02L-1 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/16 STD95NH02L - STD95NH02L-1 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance ...

Page 7

STD95NH02L - STD95NH02L-1 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized ...

Page 8

Test circuit 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/16 STD95NH02L - STD95NH02L-1 Figure 15. Gate charge test ...

Page 9

STD95NH02L - STD95NH02L-1 4 Appendix A Figure 20. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a ...

Page 10

Appendix A Table 7. Power losses calculation Recovery (1) Pdiode Conductio n Pgate Qoss 1. Dissipated by SW1 during turn-on Table 8. Parameters meaning Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P Qoss 10/16 ...

Page 11

STD95NH02L - STD95NH02L-1 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 12

Package mechanical data DIM (L1 12/16 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

Page 13

STD95NH02L - STD95NH02L-1 DIM TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 0.85 ...

Page 14

Packing mechanical data 6 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

Page 15

STD95NH02L - STD95NH02L-1 7 Revision history Table 9. Revision history Date 13-Sep-2004 27-May-2005 09-Aug-2006 02-Aug-2007 Revision 1 First release 2 Some values changed in 3 The document has been updated 4 Error on cover page; added IPAK Revision history Changes ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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