IRFS5620TRLPBF International Rectifier, IRFS5620TRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS5620TRLPBF
• Description: MOSFET N-CH 200V 24A D2PAK
• Manufacturer: International Rectifier

Specifications of IRFS5620TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 50V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 63.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 24 A
• Power Dissipation: 144 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFS5620TRLPBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
4
100
1.0
30
25
20
15
10
10
5
0
0.001
0.01
0.2
25
0.1
10
1E-006
1
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.6
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
D = 0.50
0.01
0.10
0.02
0.05
0.20
0.8
100
T J = 25°C
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1.0
125
1.2
V GS = 0V
150
1.4
t 1 , Rectangular Pulse Duration (sec)
175
1.6
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.001
i/Ri
R
1
R
1
1000
Fig 10. Threshold Voltage vs. Temperature
τ
100
0.1
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2
10
τ
R
2
1
2
R
2
-75 -50 -25
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 8. Maximum Safe Operating Area
τ
Tc = 25°C
Tj = 175°C
Single Pulse
C
τ
Ri (°C/W) τi (sec)
V DS , Drain-to-Source Voltage (V)
0.456
0.589
I D = 100µA
I D = 250uA
ID = 1.0mA
ID = 1.0A
0.01
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
10msec
0
10
1msec
25 50 75 100 125 150 175
0.000311
0.003759
100µsec
100
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0.1
1000