IRFS5620TRLPBF International Rectifier, IRFS5620TRLPBF Datasheet

MOSFET N-CH 200V 24A D2PAK

IRFS5620TRLPBF

Manufacturer Part Number
IRFS5620TRLPBF
Description
MOSFET N-CH 200V 24A D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRFS5620TRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 50V
Power - Max
144W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
63.7mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
24 A
Power Dissipation
144 W
Mounting Style
SMD/SMT
Gate Charge Qg
25 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFS5620TRLPBFTR
Features
• Key Parameters Optimized for Class-D Audio
• Low R
• Low Q
• Low Q
• 175°C Operating Junction Temperature for
• Can Deliver up to 300W per Channel into 8Ω Load in
Notes  through
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
Amplifier Applications
Ruggedness
Half-Bridge Configuration Amplifier
J
STG
Efficiency
DS
GS
D
D
θJC
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
= 25°C
= 100°C
G
RR
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
SW
for Better THD and Improved
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Junction-to-Case
Junction-to-Ambient (PCB Mount)
f
f
f
Parameter
Parameter
GS
GS
@ 10V
@ 10V
h
V
R
Q
Q
R
T
G
J
DS
DS(ON)
G(int)
g
sw
max
typ.
typ.
Gate
typ.
G
typ. @ 10V
D
S
Key Parameters
IRFSL5620PbF
Typ.
–––
–––
IRFS5620PbF
-55 to + 175
D
IRFS5620PbF
Drain
Max.
0.96
200
100
144
300
D
D
±20
24
17
72
2
Pak
G
1.045
Max.
S
63.7
200
175
40
9.8
2.6
25
IRFSL5620PbF
D
Source
TO-262
S
Units
Units
W/°C
°C/W
°C
W
m
V
A
12/18/08
nC
nC
G
°C
V
D
S
1

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IRFS5620TRLPBF Summary of contents

Page 1

Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low R for Improved Efficiency DSON • Low Q and Q for Better THD and Improved G SW Efficiency • Low Q for Better THD and Lower EMI RR ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

175° 25° 1.0 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche ...

Page 6

D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 16. HEXFET 15V DRIVER D.U 20V 0.01 Ω Fig 17a. Unclamped ...

Page 7

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 Note: For the most current drawing please refer to IR website at ...

Page 8

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 9

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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