IRF7842TRPBF International Rectifier, IRF7842TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7842TRPBF
• Description: MOSFET N-CH 40V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7842TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4500pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7842PBFTR

IRF7842PbF
6
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance Vs. Gate Voltage
16
12
8
4
0
I
AS
2.0
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
4.0
I AS
D.U.T
t p
0.01 Ω
L
6.0
T J = 125°C
T J = 25°C
15V
V
8.0
(BR)DSS
DRIVER
I D = 18A
+
-
V DD
10.0
A
200
160
120
80
40
90%
V
0
10%
V
DS
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
25
GS
Fig 13c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
Vs. Drain Current
V
GS
t
r
75
V
DS
t
100
d(off)
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TOP
BOTTOM
D.U.T
L
t
D
f
125
V
DD
7.5A
6.7A
I D
14A
+
-
150