IRF7842TRPBF International Rectifier, IRF7842TRPBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF7842TRPBF
Manufacturer Part Number
IRF7842TRPBF
Description
MOSFET N-CH 40V 18A 8-SOIC
Manufacturer
International Rectifier
Specifications of IRF7842TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
4500pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IRF7842TRPBF
Part Number:
IRF7842TRPBF
Part Number:
IRF7842TRPBF
Part Number:
IRF7842TRPBF
Applications
l
l
l
l
Benefits
l
l
l
Notes through
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
DS
GS
D
D
J
STG
θJL
θJA
@ T
@ T
for Isolated DC-DC Converters
Synchronous MOSFET for Notebook
Processor Power
Secondary Synchronous Rectification
Synchronous Fet for Non-Isolated
Lead-Free
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
@T
@T
DC-DC Converters
and Current
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 9
at 4.5V V
Parameter
Parameter
f
f
GS
fg
g
GS
GS
@ 10V
@ 10V
G
S
S
S
V
40V 5.0m @V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
-55 to + 150
HEXFET
8
7
6
5
DS(on)
IRF7842PbF
Max.
0.02
± 20
140
2.5
1.6
40
18
14
D
D
D
D
A
A
GS
max
Max.
®
= 10V
20
50
Power MOSFET
SO-8
Qg (typ.)
33nC
Units
Units
W/°C
°C/W
09/21/04
°C
W
V
A
1
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IRF7842TRPBF Summary of contents
Applications l Synchronous MOSFET for Notebook Processor Power Secondary Synchronous Rectification l for Isolated DC-DC Converters Synchronous Fet for Non-Isolated l DC-DC Converters l Lead-Free Benefits l Very Low R at 4.5V V DS(on) l Low Gate Charge l Fully ...
IRF7842PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) ...
PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 150°C 10 25°C 1 ...
IRF7842PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss Crss ...
Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 ...
IRF7842PbF 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS 0.01 Ω Fig 13a. Unclamped Inductive ...
D.U.T + • • - • + - • • • SD • Fig 15. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 16. Gate ...
IRF7842PbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIME NS ...
SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...
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