STD70N10F4 STMicroelectronics, STD70N10F4 Datasheet - Page 4

• Manufacturer Part Number: STD70N10F4
• Description: MOSFET N-CH 100V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD70N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0195 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.015ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8806-2; STD70N10F4

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
Q
oss
t
t
rss
iss
gs
gd
r
f
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15207 Rev 3
I
V
V
V
V
V
D
V
R
(see Figure 15)
V
R
(see Figure 15)
V
V
V
V
(see Figure 16)
DS
DS
GS
DS
GS
DD
DD
DS
GS
DD
GS
G
G
= 250 µA, V
= 4.7 Ω V
= 4.7 Ω, V
= max rating,T
= max rating
= ± 20 V
= V
= 10 V, I
= 25 V, f = 1 MHz,
= 0
= 10 V
= 50 V, I
= 50 V, I
= 80 V, I
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
GS
D
D
GS
= 250 µA
= 30 A
GS
= 30 A
= 30 A,
= 65 A,
= 10 V
= 0
= 10 V
C
=125 °C
Min.
Min.
100
Min.
2
-
-
-
-
STB/D/P/W70N10F4
0.015
Typ.
Typ.
5800
Typ.
300
190
30
20
65
20
85
20
25
0.0195
Max.
Max.
Max.
100
100
-
-
1
4
-
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
V
V
Ω