STL50NH3LL STMicroelectronics, STL50NH3LL Datasheet - Page 5

• Manufacturer Part Number: STL50NH3LL
• Description: MOSFET N-CH 30V 27A PWRFLAT6X5
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL50NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 965pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 27 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4114-2

STL50NH3LL
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
I
I
di/dt = 100 A/µs,
V
(see Figure 16)
DD
SD
SD
G
DD
=4.7 Ω, V
Test conditions
=15 V, I
=13 A, V
=13 A,
Test conditions
=20 V, Tj=150 °C
D
GS
= 6.5 A,
GS
=0
=4.5 V
Electrical characteristics
Min.
Min.
Typ.
17.4
1.45
Typ.
24
8.5
15
32
18
Max
Max.
1.3
13
52
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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