STD45NF75T4 STMicroelectronics, STD45NF75T4 Datasheet - Page 4

• Manufacturer Part Number: STD45NF75T4
• Description: MOSFET N-CH 75V 40A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD45NF75T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4334-2

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25 °C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 9902 Rev 5
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250 µA, V
= 125 °C
Test conditions
= 4.7 Ω V
Test conditions
= max rating
= max rating,
= ±20 V
= V
= 10 V, I
= 25 V
= 25 V, f = 1 MHz,
= 0
= 37 V, I
= 60 V, I
= 10 V, R
Figure
Figure
GS
, I
,
I
20)
21)
D
D
D
D
GS
D
G
GS
= 250 µA
= 20 A
= 20 A
= 40 A,
= 20 A
= 4.7 Ω
= 10 V
=0
Min.
Min.
75
2
-
-
-
-
0.018
1760
Typ.
Typ.
360
140
50
15
40
55
12
60
13
23
0.024
Max.
Max.
±100
80
10
STD45NF75
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω