STD95N2LH5 STMicroelectronics, STD95N2LH5 Datasheet - Page 7

• Manufacturer Part Number: STD95N2LH5
• Description: MOSFET N-CH 25V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD95N2LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 13.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 1817pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 3.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0045 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 80 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7005-2

STD95N2LH5, STP95N2LH5, STU95N2LH5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
Normalized B
vs temperature
VDSS
vs temperature
Doc ID 13834 Rev 5
Figure 9.
Figure 13. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
7/17