STD60N3LH5 STMicroelectronics, STD60N3LH5 Datasheet - Page 12

• Manufacturer Part Number: STD60N3LH5
• Description: MOSFET N-CH 30V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7971-2; STD60N3LH5

Package mechanical data
12/21
Table 9.
Figure 21. DPAK footprint
a. All dimension are in millimeters
Dim.
A1
A2
D1
E1
V2
b4
e1
L1
L2
L4
c2
A
D
E
H
R
b
c
e
L
DPAK (TO-252) mechanical data
6.7
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0°
1
STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S
(a)
Doc ID 14079 Rev 4
6.7
1.8
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
mm
3
1.6
1.6
2.3
2.3
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8°
1
AM08850v1