STD60N3LH5 STMicroelectronics, STD60N3LH5 Datasheet - Page 8

• Manufacturer Part Number: STD60N3LH5
• Description: MOSFET N-CH 30V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7971-2; STD60N3LH5

Test circuits
3
8/16
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 14079 Rev 3
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
STD60N3LH5, STP60N3LH5, STU60N3LH5
circuit