IRLR8743TRPBF International Rectifier, IRLR8743TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLR8743TRPBF
• Description: MOSFET N-CH 30V 160A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8743TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4880pF @ 15V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 135 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR8743TRPBFTR

IRLR/U8743PbF
4
100000
10000
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
0.5
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
1.0
T J = 25°C
C rss
1.5
C oss
C iss
2.0
f = 1 MHZ
10
2.5
3.0
V GS = 0V
3.5
4.0
100
10000
1000
100
0.1
10
5.0
4.0
3.0
2.0
1.0
0.0
1
Fig 8. Maximum Safe Operating Area
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge vs.
I D = 20A
5
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
10msec
V DS = 24V
V DS = 15V
1msec
100µsec
10
www.irf.com
100