IRLR8743TRPBF International Rectifier, IRLR8743TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLR8743TRPBF
• Description: MOSFET N-CH 30V 160A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8743TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4880pF @ 15V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 135 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR8743TRPBFTR

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1000
1000
100
0.1
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
10
0.1
10
1
1
0
0.1
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2.5V
2
T J = 25°C
1
V DS = 15V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
4
10
TOP
BOTTOM
6
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
8
2.0
1.5
1.0
0.5
1000
100
10
-60 -40 -20 0 20 40 60 80 100120140160180
1
0.1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I D = 25A
V GS = 10V
T J , Junction Temperature (°C)
IRLR/U8743PbF
V DS , Drain-to-Source Voltage (V)
vs. Temperature
2.5V
1
≤ 60µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
3