IRFR5410TRPBF International Rectifier, IRFR5410TRPBF Datasheet - Page 5
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IRFR5410TRPBF
Manufacturer Part Number
IRFR5410TRPBF
Description
MOSFET P-CH 100V 13A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR5410TRPBF.pdf
(11 pages)
Specifications of IRFR5410TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
205 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
66W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
205 m Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
13 A
Power Dissipation
66 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
46 ns
Gate Charge Qg
38.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
58 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR5410PBFTR
IRFR5410TRPBF
IRFR5410TRPBFTR
IRFR5410TRPBF
IRFR5410TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR5410TRPBF
Manufacturer:
International Rectifier
Quantity:
31 920
Part Number:
IRFR5410TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
15
12
9
6
3
0
0.01
25
0.1
10
0.00001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
V
10%
90%
V
GS
DS
0.01
1. Duty factor D = t / t
2. Peak T = P
t
d(on)
Notes:
≤ 0.1 %
≤ 1
t
r
J
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
2
t
f
+
-
1
5