IRFR5410TRPBF International Rectifier, IRFR5410TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR5410TRPBF
• Description: MOSFET P-CH 100V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR5410TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 66W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 205 m Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 66 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 46 ns
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 58 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR5410PBFTR; IRFR5410TRPBF; IRFR5410TRPBFTR

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0.01
100
0.1
100
0.1
10
10
1
1
0.1
4
TOP
BOTTOM
-V
-V
5
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
1
-4.5V
7
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
10
8
= 10V
T = 25 C
J
°
T = 150 C
J
9
°
°
100
10
100
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-14A
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20
40
-4.5V
60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-10V
3
100