IRFH3707TR2PBF International Rectifier, IRFH3707TR2PBF Datasheet - Page 7

• Manufacturer Part Number: IRFH3707TR2PBF
• Description: MOSFET N-CH 30V 12A PQFN33
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH3707TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 755pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 9.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PQFN
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 17.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH3707TR2PBFTR

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Fig 17. Gate Charge Test Circuit
‚
+
-
12V
V
GS
Same Type as D.U.T.
D.U.T
Current Regulator
.2µF
ƒ
50KΩ
3mA
Fig 16.
+
-
•
•
•
•
Current Sampling Resistors
SD
.3µF
•
•
•
I
G
-
G
D.U.T.
„
I
HEXFET
D
+
+
-
V
DS
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 18. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Qgd
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
Vgs
V
V
I
SD
GS
DD
=10V
7
Id