IRFH3707TR2PBF International Rectifier, IRFH3707TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH3707TR2PBF
• Description: MOSFET N-CH 30V 12A PQFN33
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH3707TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 755pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 9.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PQFN
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 17.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH3707TR2PBFTR

4
10000
1000
1000
100
100
0.1
10
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T
0.4
J
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
= 150°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.6
C rss
C oss
0.8
C iss
T J = 25°C
f = 1 MHZ
10
1
V GS = 0V
1.2
1.4
1.6
100
1000
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
1
Fig 8. Maximum Safe Operating Area
0
0
Fig 6. Typical Gate Charge Vs.
T A = 25°C
Tj = 150°C
Single Pulse
I D = 9.4A
Gate-to-Source Voltage
2
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
6
V DS = 24V
V DS = 15V
8
100µsec
10msec
10
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10
1msec
12
14
100
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