STS12NF30L STMicroelectronics, STS12NF30L Datasheet
STS12NF30L
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STS12NF30L Summary of contents
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... Switching application Order code Part number STS12NF30L May 2007 N-channel 30V - 0.008Ω - 12A SO-8 STripFET™ II Power MOSFET R I DS(on) D <0.009Ω 12A Internal schematic diagram Marking S12NF30L Rev 9 STS12NF30L S0-8 Package Packaging SO-8 Tape & reel 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STS12NF30L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STS12NF30L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuos Drain current (continuos (1) I Drain current (pulsed Total dissipation at T TOT 1. Pulse width limited by safe operating area Table 2. Thermal data R Thermal resistance junction-ambient Max ...
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... Max rating =Max rating ± 16V 10V 4.5V Parameter Test conditions V = 15V 25V MHz 24V 4.5V GS (see Figure 13) STS12NF30L Min. Typ =125° 250µ 0.008 0.01 D Min. Typ. Max 2400 590 200 35 = 12A Max. Unit V 1 µA 10 µA ±100 nA V Ω ...
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... STS12NF30L Table 5. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f t Off-voltage rise time r(Voff) t fall time f cross-over time t c Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STS12NF30L ...
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... STS12NF30L Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/12 ...
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... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform STS12NF30L ...
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... STS12NF30L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STS12NF30L inch MIN. TYP. MAX. 0.068 0.003 0.009 0.064 0.025 0.033 0.013 0.018 0.007 0.010 0.010 0.019 0.188 0.196 0.228 0.244 ...
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... STS12NF30L 5 Revision history Table 7. Revision history Date 09-Sep-2004 17-Aug-2006 31-Jan-2007 08-May-2007 Revision 6 Complete version 7 New template, no content change 8 Typo mistake on Table 9 Mistake on Table 6 Revision history Changes 1. 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STS12NF30L ...