IRLL3303TRPBF International Rectifier, IRLL3303TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLL3303TRPBF
• Description: MOSFET N-CH 30V 4.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL3303TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 2.1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLL3303PBFTR

IRLL3303PbF
Specification changes
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
Notes:
Rev. #
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
d(on)
d(off)
S
SM
on
I
r
f
rr
DSS
fs
GSS
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
DS(on)
2
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
DD
G
1
1
= 25Ω, I
= 15V, starting T
/∆T
J
Parameters Old spec.
V
V
GS(th)
GS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
AS
(Max.)
= 4.6A. (See Figure 12)
(Max.)
J
= 25°C, L = 13mH
Parameter
Parameter
2.5V
±20
New spec.
J
No spec.
= 25°C (unless otherwise specified)
±16
ƒ
„
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
–––
––– 0.034 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
5.5
30
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 150°C
≤ 4.6A, di/dt ≤ 110A/µs, V
Removed V
Decrease V
–––
––– 0.031
––– 0.045
–––
–––
–––
–––
––– -100
–––
840
340
170
–––
–––
–––
160
4.4
7.2
34
10
22
33
28
65
–––
–––
–––
–––
–––
–––
250
100
–––
–––
–––
–––
240
6.5
1.3
25
50
16
0.91
98
37
GS
GS(th)
Comments
V/°C
(Max). Specification
µA
nA
nC
nC
ns
pF
ns
V
V
S
V
Ω
A
(Max). Specification
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= 4.6A
= 4.6A
= 25°C, I
= 25°C, I
= 6.2Ω
= 3.2Ω, See Fig. 10 „
= V
= 10V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -16V
= 16V
= 10V, See Fig. 6 and 9 „
= 15V
= 0V
≤ V
GS
Conditions
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
= 4.6A, V
= 4.6A
= 250µA
= 4.6A „
= 2.3A
= 2.3A „
,
= 0V
= 0V, T
D
Revision Date
www.irf.com
= 1mA
GS
J
= 125°C
11/1/96
11/1/96
= 0V „
S
+L
D
)