IRLL3303TRPBF International Rectifier, IRLL3303TRPBF Datasheet

IRLL3303TRPBF

Manufacturer Part Number

IRLL3303TRPBF

Description

MOSFET N-CH 30V 4.6A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRLL3303TRPBF.pdf (9 pages)

Specifications of IRLL3303TRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

31 mOhm @ 4.6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.6A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

50nC @ 10V

Input Capacitance (ciss) @ Vds

840pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

45 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

16 V

Continuous Drain Current

4.6 A

Power Dissipation

2.1 W

Mounting Style

SMD/SMT

Gate Charge Qg

34 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRLL3303PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRLL3303TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRLL3303TRPBF

Quantity:

20 550

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Absolute Maximum Ratings

Thermal Resistance

Description

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

dv/dt

www.irf.com

θJA

@ T

Surface Mount

Dynamic dv/dt Rating

Logic-Level Gate Drive

Fast Switching

Ease of Paralleling

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

STG

= 25°C

= 70°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

This

Typ.

IRLL3303PbF

HEXFET

-55 to + 150

S O T -22 3

Max.

0.10

± 16

140

6.5

4.6

3.7

2.1

1.0

8.3

1.3

4.6

Max.

Power MOSFET

DS(on)

120

DSS

= 4.6A

= 0.031Ω

= 30V

PD- 95223

mW/°C

Units

°C/W

V/ns

°C

04/27/04

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IRLL3303TRPBF Summary of contents

Page 1

... Ultra Low On-Resistance l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRLL3303PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TO P 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOT TOM 3. µ 5° 0 rain-to-S ...

Page 4

IRLL3303PbF iss ...

Page 5

Q G 10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors Fig 9b. Gate ...

Page 6

IRLL3303PbF .01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * V GS www.irf.com Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • ...

Page 8

IRLL3303PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING T HIS IS AN IRF L014 INT ERNATIONAL RECTIF IER LOGO 8 PART NUMBER FL014 314P A = ASS EMBLY SITE ...

Page 9

SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches (. (. ...

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