STN3NF06L STMicroelectronics, STN3NF06L Datasheet - Page 3
![MOSFET N-CH 60V 4A SOT223](/photos/5/48/54884/sot-223_sml.jpg)
STN3NF06L
Manufacturer Part Number
STN3NF06L
Description
MOSFET N-CH 60V 4A SOT223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STN3NF06L.pdf
(12 pages)
Specifications of STN3NF06L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 5V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
4 A
Power Dissipation
3300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3177-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN3NF06L
Manufacturer:
TI
Quantity:
4 000
Company:
Part Number:
STN3NF06L
Manufacturer:
ST
Quantity:
4 518
Company:
Part Number:
STN3NF06L
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STN3NF06L
Manufacturer:
ST
Quantity:
20 000
STN3NF06L
1
Electrical ratings
Table 2.
1. Current limited by the package
2. Pulse width limited by safe operating area
3.
4.
Table 3.
1. When Mounted on FR-4 board with 1 inch
2. When mounted on minimum recommended footprint
3. for 10 sec. 1.6 mm from case
Symbol
dv/dt
Symbol
E
R
R
I
I
Starting T
P
DM
V
I
SD
V
T
AS
T
thj-pcb
thj-pcb
D
T
I
TOT
GS
DS
stg
D
l
(1)
(3)
J
(2)
≤ 3 A, di/dt ≤ 150 A/µs, V
(4)
(3)
j
Absolute maximum ratings
Thermal data
= 25 °C, I
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Thermal resistance junction-PCB
Thermal resistance junction-PCB
Maximum lead temperature for soldering
purpose typ
D
= 4 A, V
DD
DD
Parameter
Parameter
≤ V
= 30 V
C
(BR)DSS
= 25 °C
GS
2
= 0)
, T
pad, 2 oz. of Cu. and t <10 sec.
J
C
C
=100 °C
≤ T
= 25 °C
(1)
(2)
JMAX
max
max
-55 to 150
Value
Value
0.026
± 16
100
260
200
2.9
3.3
38
60
16
10
4
Electrical ratings
°C/W
°C/W
W/°C
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
3/12