IRF7663TRPBF International Rectifier, IRF7663TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7663TRPBF
• Description: MOSFET P-CH 20V 8.2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7663TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Input Capacitance (ciss) @ Vds: 2520pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 8.2 A
• Power Dissipation: 1.8 W
• Gate Charge Qg: 30 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7663TRPBF; IRF7663TRPBFTR

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100
100
10
10
1
0.1
2.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
TOP
BOTTOM
-V
-V
DS
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
GS
, Drain-to-Source Voltage (V)
T = 25 C
2.5
J
, Gate-to-Source Voltage (V)
1
°
-2.25V
3.0
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
= -15V
°
3.5
°
4.0
100
100
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I =
TOP
BOTTOM
D
-V
-8.2A
DS
T , Junction Temperature ( C)
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
IRF7663PbF
1
20 40 60
-2.25V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-4.5V
3
100