IRF7663TRPBF International Rectifier, IRF7663TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7663TRPBF
• Description: MOSFET P-CH 20V 8.2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7663TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Input Capacitance (ciss) @ Vds: 2520pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 8.2 A
• Power Dissipation: 1.8 W
• Gate Charge Qg: 30 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7663TRPBF; IRF7663TRPBFTR

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IRF7663PbF
Source-Drain Ratings and Characteristics
Notes:
‚
Electrical Characteristics @ T
I
I
V
t
Q
SM
S
rr
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
d(on)
r
d(off)
f
2
SD
rr
DSS
Repetitive rating; pulse width limited by
fs
(BR)DSS
GSS
max. junction temperature.
GS(th)
oss
rss
g
gs
gd
iss
DS(on)
(BR)DSS
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
≤
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
≤
J
= 25°C (unless otherwise specified)
ƒ
„
R
When mounted on 1 inch square copper board, t<10 sec
Starting T
Min. Typ. Max. Units
G
–––
–––
–––
-0.60 –––
Min. Typ. Max. Units
14.5
–––
–––
––– -0.01 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2520 –––
–––
–––
-20
= 25Ω, I
–––
70
50
––– -100
–––
–––
––– 0.020
––– 0.040
–––
–––
–––
100
125
172
615
375
5.0
7.0
30
11
J
AS
= 25°C, L = 17.8mH
= -3.6A. (See Figure 10)
-1.2
105
-66
-1.8
10.5
75
–––
-1.2
–––
-1.0
–––
–––
–––
–––
–––
–––
-25
100
7.5
45
V/°C
nC
ns
V
nC
pF
V
V
Ω
S
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
showing the
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
J
J
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= -6.0A
= -6.0A
= 6.2Ω
= 1.64Ω
= 0V, I
= -10V, I
= -16V, V
= -16V, V
= -10V
= -10V
= -10V
= -4.5V, I
= -2.5V, I
= V
= -12V
= 12V
= -5.0V
= 0V
GS
Conditions
, I
F
S
D
Conditions
= -2.5A
D
= -7.0A, V
= -250uA
D
‚
‚
D
D
GS
GS
= -250µA
‚
= -7.0A
= -7.0A
= -5.1A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
‚
‚
J
= 70°C
= 0V
G
‚
D
S