STQ1NK80ZR-AP STMicroelectronics, STQ1NK80ZR-AP Datasheet - Page 10
STQ1NK80ZR-AP
Manufacturer Part Number
STQ1NK80ZR-AP
Description
MOSFET N-CH 800V 0.3A TO-92
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STQ1NK80ZR-AP.pdf
(15 pages)
Specifications of STQ1NK80ZR-AP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
3W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N Channel
Continuous Drain Current Id
300mA
Drain Source Voltage Vds
800V
On Resistance Rds(on)
13ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Configuration
Single
Resistance Drain-source Rds (on)
16 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.3 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6197-3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
10/15
DIM.
S1
e1
W
A
D
E
R
V
b
e
L
12.70
4.32
0.36
4.45
3.30
2.41
1.14
2.16
0.92
0.41
MIN.
TO-92 MECHANICAL DATA
mm.
TYP
5°
15.49
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
2.41
1.52
0.56
0.170
0.014
0.175
0.130
0.094
0.044
0.085
0.036
0.016
0.50
MIN.
TYP.
inch
5°
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
MAX.