IRFL014NTRPBF International Rectifier, IRFL014NTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFL014NTRPBF
• Description: MOSFET N-CH 55V 1.9A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL014NTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 1.9 A
• Gate Charge, Total: 7 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.1 W
• Resistance, Drain To Source On: 0.16 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 12 ns
• Time, Turn-on Delay: 6.6 ns
• Transconductance, Forward: 1.6 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFL014NPBFTR; IRFL014NTRPBF; IRFL014NTRPBFTR

IRFL014NPbF
4
350
300
250
200
150
100
100
0.1
50
10
1
0
0.4
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
C
C
C
Drain-to-Source Voltage
V
V
iss
oss
rss
T = 150°C
DS
SD
J
0.6
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
Forward Voltage
GS
iss
rss
oss
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
gd
gd
J
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
100
1.4
A
A
100
0.1
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
1
Fig 6. Typical Gate Charge Vs.
I
T
T
Single Pulse
D
A
J
= 1.7A
= 25°C
= 150°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
2
G
, Drain-to-Source Voltage (V)
4
BY R
V
V
V
10
DS
DS
DS
DS(on)
= 44V
= 28V
= 11V
FOR TEST CIRCUIT
6
SEE FIGURE 9
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8
10ms
100µs
1ms
100
10
A
A