IRFL014NTRPBF International Rectifier, IRFL014NTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFL014NTRPBF
• Description: MOSFET N-CH 55V 1.9A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL014NTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 1.9 A
• Gate Charge, Total: 7 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.1 W
• Resistance, Drain To Source On: 0.16 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 12 ns
• Time, Turn-on Delay: 6.6 ns
• Transconductance, Forward: 1.6 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFL014NPBFTR; IRFL014NTRPBF; IRFL014NTRPBFTR

IRFL014NPbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
Notes:
I
I
V
t
Q
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
2
DD
G
= 25Ω, I
= 25V, starting T
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 3.4A. (See Figure 12)
J
= 25°C, L = 8.2mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
SD
Min. Typ. Max. Units
2.0
1.6
–––
–––
–––
55
J
≤ 150°C
≤ 1.7A, di/dt ≤ 250A/µs, V
0.054 –––
–––
––– 0.16
–––
–––
–––
–––
–––
––– -100
190
–––
7.0
1.2
3.3
7.1
6.6
3.3
12
72
33
41
64
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
4.0
1.0
1.8
5.0
1.0
25
11
61
95
V/°C
nC
µA
nA
nC
pF
ns
Ω
V
V
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
DD
G
D
= 1.7A
= 1.7A
= 25°C, I
= 25°C, I
= 16Ω, See Fig. 10 „
= 6.0Ω
≤ V
= 0V, I
= 10V, I
= V
= 25V, I
= 44V, V
= 44V, V
= 44V
= 10V, See Fig. 6 and 13 „
= 28V
= 0V
= 25V
= 20V
= -20V
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 1.7A, V
= 1.7A
= 250µA
= 0.85A
= 1.9A „
,
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V ƒ