STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 14

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

Package mechanical data
14/16
DIM.
e1
e4
l1
l2
a
b
d
g
L
c
f
MIN.
2.27
4.57
0.63
0.67
0.2
1.5
2.9
6.7
3.5
6.3
B
C
C
b
L
f
SOT-223 MECHANICAL DATA
TYP.
mm
0.65
2.3
4.6
0.4
1.6
0.7
3.5
6.5
a
3
7
E
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
g
MAX.
2.33
4.63
0.67
0.32
0.73
1.7
0.6
3.1
7.3
3.7
6.7
d
179.9
114.2
263.8
137.8
MIN.
89.4
24.8
59.1
26.4
248
7.9
c
l2
181.1
118.1
275.6
137.8
255.9
TYP.
mils
90.6
15.7
25.6
27.6
63
e4
P008B
MAX.
182.3
122.1
287.4
145.7
263.8
91.7
23.6
26.4
66.9
12.6
28.7