PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
Table 6.
[1]
PSMN2R6-40YS_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
(A)
I
150
D
120
90
60
30
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
8
0.5
6
…continued
1
Conditions
I
see
I
V
I
V
S
S
S
DS
DS
1.5
V
= 25 A; V
= 50 A; dI
= 50 A; dI
GS
Figure 17
= 20 V
= 20 V; T
003aad190
(V) = 4.5
V
DS
(V)
5.5
5
GS
S
S
2
Rev. 01 — 23 June 2009
/dt = -100 A/µs; V
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
j
= 25 °C;
Fig 6.
6000
(pF)
5000
4000
3000
2000
GS
GS
C
= 0 V;
= 0 V;
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
3
PSMN2R6-40YS
Min
-
-
-
6
Typ
0.78
45
47
9
© NXP B.V. 2009. All rights reserved.
V
003aad196
GS
Max
1.2
-
-
C
C
(V)
rss
iss
12
Unit
V
ns
nC
6 of 13