RSD200N10TL Rohm Semiconductor, RSD200N10TL Datasheet - Page 2

• Manufacturer Part Number: RSD200N10TL
• Description: MOSFET N-CH 100V 20A CPT3
• Manufacturer: Rohm Semiconductor

Specifications of RSD200N10TL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 48.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 20 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RSD200N10TLTR

Transistors
Forward voltage
∗ Pulsed
Electrical characteristics (Ta=25 C)
Body diode characteristics (Source-drain) (Ta=25 C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Parameter
Parameter
Symbol
V
SD
V
Symbol
R
V
∗
| Y
(BR)DSS
t
t
I
I
C
C
C
Q
Q
DS(on)
GS(th)
d(on)
d(off)
GSS
DSS
Q
t
t
oss
rss
iss
fs
r
f
gs
gd
g
Min.
|
−
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
100
1.0
14
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
2200
Typ.
48.5
180
110
128
193
5.5
Max.
41
44
45
18
61
13
1.5
−
−
−
−
−
Max.
±10
Unit
2.5
10
52
58
59
−
−
−
−
−
−
−
−
−
−
−
−
V
I
S
Unit
mΩ
mΩ
mΩ
= 20A, V
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
I
V
R
D
D
D
D
D
D
D
Conditions
GS
GS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=10A, V
=10A, V
=10A, V
=10A, V
=10A, V
L
G
=20A
L
=5Ω
=2.5Ω / R
=10Ω
=0V
=100V, V
=10V, I
=25V
=±20V, V
=0V
=10V
=10V
50V
GS
GS
GS
DS
DD
D
GS
Conditions
=1mA
=10V
=10V
=4.5V
=4.0V
G
DS
=0V
=10Ω
GS
50V
=0V
=0V
RSD200N10
Rev.A
2/5