RSD200N10TL Rohm Semiconductor, RSD200N10TL Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single RSD200N10TL
Manufacturer Part Number
RSD200N10TL
Description
MOSFET N-CH 100V 20A CPT3
Manufacturer
Rohm Semiconductor
Specifications of RSD200N10TL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
48.5nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
20 A
Power Dissipation
20 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RSD200N10TLTR
Transistors
4V Drive Nch MOSFET
RSD200N10
Silicon N-channel MOSFET
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 265μH, V
∗3 Limited only by maximum tempterature allowed
Channel to case
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25 °C )
Channel temperature
Range of storage temperature
Structure
Features
Packaging specifications
Type
Thermal resistance
Applications
RSD200N10
Absolute maximum ratings (Ta=25 C)
guaranteed to be 30V.
Package
Code
Basic ordering unit (pieces)
DD
Parameter
=50V, R
Parameter
G
=25Ω, Starting, Tch=25°C
Continuous
Pulsed
Continuous
Pulsed
GSS
)
Symbol
V
V
Tstg
Tch
E
I
I
I
P
DSS
GSS
I
I
DP
SP
AS
D
S
AS
D
Taping
2500
TL
∗3
∗1
∗1
∗2
∗2
Rth(ch-c)
Symbol
−55 to +150
Limits
100
±20
±20
±80
150
20
80
20
85
20
Limits
6.25
Unit
mJ
°C
°C
W
V
V
A
A
A
A
A
Dimensions (Unit : mm)
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Source)
CPT3
°C/W
Unit
Inner circuit
(1)
∗2
(2)
∗1
(3)
RSD200N10
Rev.A
∗1 BODY DIODE
∗2 ESD PROTECTION
(1)GATE
(2)DRAIN
(3)SOURCE
DIODE
1/5
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RSD200N10TL Summary of contents
Transistors 4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (V ) GSS guaranteed to be 30V. 5) Drive circuits can be simple. ...
Transistors Electrical characteristics (Ta=25 C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage R Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise ...
Transistors Electrical characteristic curves RSD200N10 15 T a=25°C V =50V DD I =20A D Pulsed Total Gate Charge : Qg(nC) Fig.3 Dynamic Input Characteristics Rev.A 3/5 ...
Transistors RSD200N10 Rev.A 4/5 ...
Transistors Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.2-1 Gate charge measurement circuit Fig.3-1 Avalanche measurement circuit RSD200N10 Fig.1-2 Switching waveforms Fig.2-2 Gate charge waveform Fig.3-2 Avalanche waveform Rev.A 5/5 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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